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9789401775120 English 9401775125 This book guides the reader through thenext step in the evolution of NAND flash memory technology, namely thedevelopment of 3D flash memories, in which multiple layers of memory cells aregrown within the same piece of silicon. It describes their workingprinciples, device design and architectures, fabrication techniques andpractical implementation, and describes how 3D flash is a brand new technology,not only because of its multi-layer architecture but also because it is basedon a new type of NAND memory cell. The book begins with two chaptersreviewing the principles of NAND flash memories and planar charge traptechnology, before chapter 3 introduces 3D chapter trap technology. 3D can becombined with the other storage dimensions, namely multilevel and die stacking;chapter 4 considers die-stacking approaches, their main topologies, designs andintegration issues, whilst chapter 5 reviews the principles, materials and coststructure of 3D silicon monolithic systems. There is a wide range ofdifferent materials and vertical architectures; each vendor has its uniquesolution, and the book contains a series of chapters reviewing the most common approaches in theindustry. The book concludes with achapter on SSDs based on 3D NAND flash, considering performance, power and costissues. How many generations of 3D flash memoryare possible? Can 3D flash go down to feature sizes below 20nm? How many layerscan be integrated in the same silicon? Will 3D flash be reliable enough forconsumer and enterprise applications? These are some of the questions that thisbook answers by providing insights into 3D flash memory design, processtechnology and applications., This book walks the reader through the next step in the evolution ofNAND flash memory technology, namely the development of 3D flash memories, inwhich multiple layers of memory cells are grown within the same piece ofsilicon. It describes their workingprinciples, device architectures, fabrication techniques and practicalimplementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives(SSDs), the book digs into the details of the flash memory cell itself,covering both floating gate and emerging charge trap technologies. There is aplethora of different materials and vertical integration schemes out there. Newmemory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3DFG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer hasits own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D canmaterialize. The 3D wave is impacting emerging memories as well and chapter 8covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures canbe a challenge for the human brain: this is way all these chapters contain alot of bird's-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, suchas advanced packaging technology (i.e. TSV in chapter 9) and error correctioncodes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution fromlegacy BCH to the most recent LDPC codes, while chapter 11 deals with some ofthe most recent advancements in the ECC field. Last but not least, chapter 12looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integratedwithin the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D bereliable enough for enterprise and datacenter applications? These are some ofthe questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.
9789401775120 English 9401775125 This book guides the reader through thenext step in the evolution of NAND flash memory technology, namely thedevelopment of 3D flash memories, in which multiple layers of memory cells aregrown within the same piece of silicon. It describes their workingprinciples, device design and architectures, fabrication techniques andpractical implementation, and describes how 3D flash is a brand new technology,not only because of its multi-layer architecture but also because it is basedon a new type of NAND memory cell. The book begins with two chaptersreviewing the principles of NAND flash memories and planar charge traptechnology, before chapter 3 introduces 3D chapter trap technology. 3D can becombined with the other storage dimensions, namely multilevel and die stacking;chapter 4 considers die-stacking approaches, their main topologies, designs andintegration issues, whilst chapter 5 reviews the principles, materials and coststructure of 3D silicon monolithic systems. There is a wide range ofdifferent materials and vertical architectures; each vendor has its uniquesolution, and the book contains a series of chapters reviewing the most common approaches in theindustry. The book concludes with achapter on SSDs based on 3D NAND flash, considering performance, power and costissues. How many generations of 3D flash memoryare possible? Can 3D flash go down to feature sizes below 20nm? How many layerscan be integrated in the same silicon? Will 3D flash be reliable enough forconsumer and enterprise applications? These are some of the questions that thisbook answers by providing insights into 3D flash memory design, processtechnology and applications., This book walks the reader through the next step in the evolution ofNAND flash memory technology, namely the development of 3D flash memories, inwhich multiple layers of memory cells are grown within the same piece ofsilicon. It describes their workingprinciples, device architectures, fabrication techniques and practicalimplementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives(SSDs), the book digs into the details of the flash memory cell itself,covering both floating gate and emerging charge trap technologies. There is aplethora of different materials and vertical integration schemes out there. Newmemory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3DFG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer hasits own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D canmaterialize. The 3D wave is impacting emerging memories as well and chapter 8covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures canbe a challenge for the human brain: this is way all these chapters contain alot of bird's-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, suchas advanced packaging technology (i.e. TSV in chapter 9) and error correctioncodes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution fromlegacy BCH to the most recent LDPC codes, while chapter 11 deals with some ofthe most recent advancements in the ECC field. Last but not least, chapter 12looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integratedwithin the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D bereliable enough for enterprise and datacenter applications? These are some ofthe questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.